By David Johns Ken Martin
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Additional info for Analog Integrated Circuit Design
These are the source and drain sidewall capacitances, C s_sw and C d-sw. These capacitances can be large because of some highly doped p + regions under the thick field oxide called field implants. The major reason these regions exist is to ensure there is no leakage current between transistors. Because they are highly doped and they lie beside the highly doped source and drain junctions, the sidewall capacitances can result in large additional capacitances that must be taken into account in determining C sb and C db .
126) where N c and Nv are the densities of states in the conduction and valence bands and E g is the difference in energy between the two bands. , is a strong function of temperature (it approximately doubles for every temperature increase of II 'C for silicon), the leakage current is also a strong function of temperature. Roughly speaking, the leakage current also doubles for every II 'C rise in temperature. Thus, the leakage current at higher temperatures is much larger than at room temperature.
Thus, the npn transistor can be considered a current amplifier at low frequencies. 7 V Holes n' collector Emitter n" emitter p base , Electrans Depletion region Fig. 28 Various components of the currents of an npn transistor. 4 Bipolar-Junction Transistors 45 words, if the transistor is not cut off and the collector-base junction is reverse biased, a small base current controls a much larger collector-emitter current. A simplified overview of how an npn transistor operates follows: When the baseemitter junction becomes forward biased, it starts to conduct, similar to any forwardbiased junction.
Analog Integrated Circuit Design by David Johns Ken Martin